vishay tllg / r / y440. document number 83029 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19220 low current led in ? 3 mm tinted diffused package features ? low power consumption high brightness cmos/mos compatible specified at i f = 2 ma luminous intensity categorized yellow and green color categorized lead-free device applications low power dc circuits parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tll.440. part color, luminous intensity angle of half intensity ( ? ) technology tllr4400 red, i v > 0.63 mcd 25 gaasp on gap tllr4401 red, i v > 1 mcd 25 gaasp on gap tlly4400 yellow, i v > 0.63 mcd 25 gaasp on gap TLLY4401 yellow, i v > 1 mcd 25 gaasp on gap tllg4400 green, i v > 0.63 mcd 25 gap on gap tllg4401 green, i v > 1 mcd 25 gap on gap parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 7ma surge forward current t p 10 si fsm 0.15 a power dissipation t amb 84 c p v 20 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 800 k/w
www.vishay.com 2 document number 83029 rev. 1.3, 31-aug-04 vishay tllg / r / y440. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tllr440. 1) in one packing unit i vmin /i vmax 0.5 yellow tlly440. 1) in one packing unit i vmin /i vmax 0.5 green tllg440. 1) in one packing unit i vmin /i vmax 0.5 parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 2 ma tllr4400 i v 0.63 1.2 mcd tllr4401 i v 12 mcd dominant wavelength i f = 2 ma d 612 625 nm peak wavelength i f = 2 ma p 635 nm angle of half intensity i f = 2 ma ? 25 deg forward voltage i f = 2 ma v f 1.9 2.4 v reverse voltage i r = 10 av r 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 2 ma tlly4400 i v 0.63 1.2 mcd TLLY4401 i v 12 mcd dominant wavelength i f = 2 ma d 581 594 nm peak wavelength i f = 2 ma p 585 nm angle of half intensity i f = 2 ma ? 25 deg forward voltage i f = 2 ma v f 2.4 2.9 v reverse voltage i r = 10 av r 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 2 ma tllg4400 i v 0.63 1.2 mcd tllg4401 i v 12 mcd dominant wavelength i f = 2 ma d 562 575 nm peak wavelength i f = 2 ma p 565 nm angle of half intensity i f = 2 ma ? 25 deg forward voltage i f = 2 ma v f 1.9 2.4 v reverse voltage i r = 10 av r 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
vishay tllg / r / y440. document number 83029 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. rel. luminous intensity vs. angular displacement 0 5 10 15 20 25 t amb - ambient temperature ( c) 95 10048 p - power dissipation ( mw ) v 0 2040 6080100 0 2 4 6 8 10 i - forward current ( ma ) f t amb - ambient temperature ( c) 95 10049 0 2040 6080100 0.4 0.2 0 0.2 0.4 0.6 95 10060 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel figure 4. forward current vs. forward voltage figure 5. rel. luminous intensity vs. ambient temperature figure 6. rel. lumin. intensity vs. forw. current/duty cycle 0.1 1 10 100 v f - forward voltage ( v ) 95 10050 i - forward current ( ma ) f red t p /t= 0.001 t p =10 s 5 4 3 2 01 0 95 10051 20 40 60 80 100 i - relative luminous intensity vrel i f =2ma 0 0.4 0.8 1.2 1.6 2.0 t amb - ambient temperature ( c) red 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11490 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 red
www.vishay.com 4 document number 83029 rev. 1.3, 31-aug-04 vishay tllg / r / y440. vishay semiconductors figure 7. relative luminous intensity vs. forward current figure 8. relative intensity vs. wavelength figure 9. forward current vs. forward voltage 0.01 0.1 1 10 100 95 10061 i f - forward current ( ma ) i - relative luminous intensity vre l 100 10 1 0.1 red 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 - wavelength ( nm ) 1.0 red i - relative luminous intensity vre l 01234 0.1 1 10 100 v f ? forward voltag e(v) 5 95 10053 i ? forward current ( ma) f yellow t p /t=0.001 t p =10 s figure 10. rel. luminous intensity vs. ambient temperature figure 11. rel. lumin. intensity vs. forw. current/duty cycle figure 12. relative luminous intensity vs. forward current 0 0.4 0.8 1.2 1.6 2.0 i - relative luminous intensity v rel yellow t amb - ambient temperature ( c) 95 10054 0 2040 6080100 yellow 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11590 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 yellow 0.01 0.1 1 10 100 95 10062 i f - forward current ( ma ) i - relative luminous intensity vre l 100 10 1 0.1
vishay tllg / r / y440. document number 83029 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 13. relative intensity vs. wavelength figure 14. forward current vs. forward voltage figure 15. rel. luminous intensity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel 01234 0.1 1 10 100 v f ? forward voltag e(v) 5 95 10056 i ? forward current ( ma) f green t p /t=0.001 t p =10 s 0 0 0.4 0.8 1.2 1.6 95 10057 20 40 60 80 100 i ? relative luminous intensity v rel t amb ? ambient temperature (c ) green i f =2ma figure 16. rel. lumin. intensity vs. forw. current/duty cycle figure 17. relative luminous intensity vs. forward current figure 18. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11591 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i ? relative luminous intensity v rel 2.0 green 0.1 1 10 0.01 0.1 1 10 100 100 95 10059 i ? relative luminous intensity v rel i f ? forward current ( ma ) green 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel
www.vishay.com 6 document number 83029 rev. 1.3, 31-aug-04 vishay tllg / r / y440. vishay semiconductors package dimensions in mm 95 10913
vishay tllg / r / y440. document number 83029 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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